| 전자부품 데이터시트 검색엔진 |
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FS10KM-3 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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FS10KM-3 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page ![]() Feb.1999 TO-220FN 10 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 0.75 ± 0.15 12 3 q GATE w DRAIN e SOURCE E w q e V V A A A A A W °C °C V g 150 ±20 10 40 10 10 40 25 –55 ~ +150 –55 ~ +150 2000 2.0 VGS = 0V VDS = 0V L = 100 µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — Symbol MAXIMUM RATINGS (Tc = 25 °C) Parameter Conditions Ratings Unit FS10KM-3 OUTLINE DRAWING Dimensions in mm MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. ¡10V DRIVE ¡VDSS ............................................................................... 150V ¡rDS (ON) (MAX) ...........................................................170m Ω ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) .......... 100ns ¡Viso ............................................................................... 2000V |
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