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STU9NC80Z/STU9NC80ZI

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

SWITCHING OFF (INDUCTIVE LOAD)

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

(see test circuit, Figure 3)

35

ns

Rise Time

16

ns

Total Gate Charge

72.2

101

nC

Gate-Source Charge

19.5

nC

Gate-Drain Charge

24.3

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off-voltage Rise Time

(see test circuit, Figure 5)

32

ns

Fall Time

42

ns

Cross-over Time

67

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

8.6

A

Source-drain Current (pulsed)

34.4

A

Forward On Voltage

1.6

V

Reverse Recovery Time

(see test circuit, Figure 5)

730

ns

Reverse Recovery Charge

7.2

µC

Reverse Recovery Current

19.5

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

25

V

αT

Voltage Thermal Coefficient

T=25°C Note(3)

1.3

Rz

Dynamic Resistance

90

Ω