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HTT1129EZTL-E 데이터시트(PDF) 6 Page - Renesas Technology Corp

부품명 HTT1129EZTL-E
상세설명  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HTT1129EZTL-E 데이터시트(HTML) 6 Page - Renesas Technology Corp

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HTT1129E
Rev.2.00 Aug 10, 2005 page 6 of 8
Q2 Main Characteristics
20
16
12
8
4
12
3
4
5
6
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
200
100
0
0.1
1.0
10
100
IB = 20 µA
40
µA
60
µA
80
µA
100
µA
120 µA
140 µA
160 µA
VCE = 1 V
VCE = 1 V
0
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Typical Forward Transfer Characteristics
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector Current
IC (mA)
0.4
0.3
0.2
0.1
0
0.5
1.0
1.5
2.0
Emitter ground
f = 1 MHz
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage
VCB (V)
8
6
5
4
1
0
1
2
5
10
20
50
100
f = 900 MHz
7
3
2
VCE = 3 V
VCE = 1 V
VCE = 2 V
Noise Figure vs. Collector Current
Collector Current IC (mA)
20
16
12
8
4
0
12
5
10
20
50
100
f = 1 GHz
VCE = 3 V
VCE = 1 V
Gain Bandwidth Product vs.
Collector Current
Collector Current IC (mA)



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