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HSG2002 데이터시트(PDF) 4 Page - Renesas Technology Corp

부품명 HSG2002
상세설명  SiGe HBT High Frequency Medium Power Amplifier
PDF  25 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSG2002 데이터시트(HTML) 4 Page - Renesas Technology Corp

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HSG2002
Rev.3.00 Jun 21, 2006 page 4 of 24
2.4GHz Characteristics
Input Power Pin (dBm)
10
-10
15
20
0
25
10
20
0
100
0
150
200
50
300
Pin - Pout Characteristics
Evaluation Board Circuit
-20
-10
-40
0
10
-20
20
1.5
3.0
4.0
2.5
1.0
Frequency f (GHz)
Sparameter vs. Frequency
-20
0
20
-40
40
-40
0
40
-20
-60
Input Power Pin (dBm)
3rd. Order Intermodulation Distortion (IMD3)
-60
20
2.0
3.5
-30
-10
-40
0
10
-20
20
1.5
3.0
4.0
2.5
1.0
Frequency f (GHz)
Sparameter vs. Frequency
2.0
3.5
-30
5
250
30
Iop
VCC = 3.6 V
Iidle = 50 mA
f = 2.4 GHz
PG
Pout
VCE = 3.6 V
Iidle = 50 mA
f = 2.4 GHz
Fundamental
(1tone)
IMD3
(2tone :
∆f = 1MHz)
S21
S22
S12
S11
VCE = 3.6 V
IC = 50 mA
S21
S22
S12
S11
VCE = 3.6 V
IC = 150 mA
Pin - Pout Characteristics
OUT
IN
C : 1 pF
R : 20
Ω
VCC
VBB:Bias Control
C : 1 to 2 pF
L : 5.6 nH
L : 1.5 nH
C : 1 pF
C : 1 pF
L : 1.8 nH
L : 10 nH
10 pF
1000 pF *1
µF
1000 pF
*1
µF
10 pF



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