HAT2210R datasheet(4/12 Pages) RENESAS

부품명	HAT2210R

상세설명	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

PDF	12 Pages

Scroll/Zoom	100%

제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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4 / 12 page

HAT2210R, HAT2210RJ

Rev.3.00, Mar.15.2005, page 4 of 11

Main Characteristics

• MOS1

4.0

3.0

2.0

1.0

100

150

200

100

110

100

0.1

1000

VGS = 2.8 V

Tc = 75

°C

−25°C

Ambient Temperature

Ta (

°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS

(V)

Typical Output Characteristics

Pulse Test

Gate to Source Voltage

VGS

(V)

Typical Transfer Characteristics

VDS = 10 V

Pulse Test

3.6 V

3.2 V

4.5 V

10 V

0.1

0.01

100

µs

1 ms

(1shot)

Ta = 25

°C

1 shot Pulse

µs

Note

Opera

tion

(PW

≤ 10

Operation in

this area is

limited by RDS(on)

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW < 10 s

Note 5 :

When using the glass epoxy board

(FR4 40x40x1.6 mm)

200

150

100

0.1

ID = 5 A

2 A

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs

Gate to Source Voltage

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

Pulse Test

1 A

100

VGS = 4.5 V

10 V

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