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H7P1002DL 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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H7P1002DL 데이터시트(HTML) 1 Page - Renesas Technology Corp |
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1 / 9 page ![]() REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 1 of 8 H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 m Ω typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 3 4 RENESAS Package code: PRSS0004ZD-B H7P0601DS H7P0601DL (Package name: DPAK (L)-(2) ) 1 2 3 4 D G S Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Drain to source voltage VDSS –100 V Gate to source voltage VGSS ±20 V Drain current ID –15 A Drain peak current ID (pulse) Note1 –60 A Body-drain diode reverse drain current IDR –15 A Avalanche current IAP Note3 –12 A Avalanche energy EAR Note3 14.4 mJ Channel dissipation Pch Note2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω |
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