BB503C datasheet(5/11 Pages) RENESAS

부품명	BB503C

상세설명	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

PDF	11 Pages

Scroll/Zoom	100%

제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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5 / 11 page

BB503C

Rev.5.00 Aug 10, 2005 page 5 of 10

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VG2S = 4 V

VG1 = VDS

VDS = 5 V

RG = 33 kΩ

VDS = 5 V

RG = 47 kΩ

Ambient Temperature Ta (

°C)

Maximum Channel Power

Dissipation Curve

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

R G

kΩ

68 kΩ

100 kΩ

2 V

VG2S = 1 V

4 V

3 V

VG2S = 1 V

3 V

4 V

2 V

VDS = 5 V

RG = 68 kΩ

VDS = 5 V

RG = 33 kΩ

f = 1 kHz

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

2 V

VG2S = 1 V

3 V

4 V

2 V

3 V

VG2S = 1 V

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