STW9NB80 datasheet(1/8 Pages) STMICROELECTRONICS

부품명	STW9NB80

상세설명	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STW9NB80

N-CHANNEL 800V - 0.85

Ω - 9.3A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.85

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC9.3

A

ID

Drain Current (continuous) at Tc =100

oC5.8

A

IDM (

•)

Drain Current (pulsed)

37

A

Ptot

T otal Dissipation at Tc =25

oC190

W

Derating Factor

1.52

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) I SD

≤ 9.3A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 9NB80

800 V

< 1

Ω

9. 3 A

July 1999

1

2

3

TO-247

1/8

유사한 부품 번호 - STW9NB80

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Inchange Semiconductor ...	STW9NB80	352Kb / 2P	isc N-Channel MOSFET Transistor

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STMicroelectronics	STP8NC60	326Kb / 9P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET Jul-2001
	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW11NB80	87Kb / 8P	N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET Jul-1999
	STW5NB90	85Kb / 8P	N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET Mar-1999
	STW7NB80	88Kb / 8P	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET Dec-1999
	STW7NC80Z	248Kb / 8P	N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET Jul-2000
	STW8NB80	50Kb / 5P	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET Jan-1999
	STW9NA80	132Kb / 10P	N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR Nov-1998
	STW9NB90	87Kb / 8P	N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET Jul-1999
	STW9NC80Z	248Kb / 8P	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™ II MOSFET Sep-2002

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STW9NB80 데이터시트(PDF) 1 Page - STMicroelectronics

STW9NB80 데이터시트(HTML) 1 Page - STMicroelectronics

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