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W9NB90 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 W9NB90
상세설명  N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

W9NB90 데이터시트(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 450 V
ID =4.5 A
RG =4.7
Ω
VGS =10 V
30
13
ns
ns
Qg
Q gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 720 V
ID =9 A
VGS =10 V
RG =4.7
Ω
VGS =10 V
64
16
26
90
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 720 V
ID =9 A
RG =4.7
Ω VGS =10 V
26
26
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
9. 7
38
A
A
VSD (
∗)
Forward On Volt age
ISD =9.7 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 9 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
1000
11
23
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STW9NB90
3/8



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