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H8SX/1663 데이터시트(PDF) 351 Page - Renesas Technology Corp |
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H8SX/1663 데이터시트(HTML) 351 Page - Renesas Technology Corp |
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351 / 1158 page ![]() Section 6 Bus Controller (BSC) Rev.1.00 Jun. 07, 2006 Page 299 of 1102 REJ09B0294-0100 (7) Idle Cycle for Accessing to DRAM/SDRAM Space In the following read cycles, when the DRAM/SDRAM space is accessed in a full access, the Tp and Tr cycles are also counted as idle cycles. Figures 6.96 and 6.97 show timing examples of full accesses to the DRAM/SDRAM space when four idle cycles are inserted. When accessing the DRAM/SDRAM space, the Ti cycles are inserted so that the sum of the numbers of Tp (precharge), Tr (row address output), and Ti cycles satisfies the specified number of idle cycles. The Ti cycles are inserted before the column address output cycle. While the SDRAM space is accessed in a full access, the CS2 signal is driven low even in an idle cycle. The idle cycle insertion is enabled even in a fast-page access in RAS down mode. The specified number of idle cycles is inserted. Figure 6.98 shows a timing example of the idle cycle insertion in RAS down mode. B φ Address bus RD RAS LLCAS T 1 T 2 T 3 T r T p T i T c1 T i T c2 External space read DRAM space read Data bus Figure 6.96 Example of DRAM Full Access after External Read (CAST = 0) |
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