STY16NA90 datasheet(1/5 Pages) STMICROELECTRONICS

부품명	STY16NA90

상세설명	N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET

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STY16NA90

N - CHANNEL 900V - 0.5

Ω - 16A - Max247

EXTREMELY LOW GATE CHARGE POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.5

Ω

s

EFFICIENT AND RELIABLE MOUNTING

THROUGH CLIP

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

REPETITIVE AVALANCHE TESTED

s

LOW INTRINSIC CAPACITANCE

s

100% AVALANCHE TESTED

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

The Max247

TM package is a new high volume

power package exibiting the same footprint as t he

industry standard TO -247, but designed t o

accomodat e much larger silicon chips, normally

supplied in bigger packages such as TO -264. The

increased die capacity makes the device ideal to

reduce component count in multiple paralleled

designs and save board space with respect to

larger packages.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES (UPS)

®

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

RDS(on)

ID

STY16NA90

900 V

< 0.54

Ω

16 A

June 1998

Max247

TM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

900

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at Tc =25

oC16

A

ID

Drain Current (cont inuous) at Tc =100

oC10

A

IDM(

•)

Drain Current (pulsed)

64

A

Ptot

Tot al Dissipation at Tc =25

oC

300

W

Derating Fact or

2.4

W/

oC

Tstg

St orage Temperature

-55 to 150

oC

Tj

Max. Operat ing Junction Temperat ure

150

oC

(

•) Pulse width limited by safe operating area

1/5

유사한 부품 번호 - STY16NA90

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Inchange Semiconductor ...	STY16NA90	366Kb / 2P	isc N-Channel MOSFET Transistor

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