M16CSLASH26 datasheet(191/239 Pages) RENESAS

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Renesas Technology Corp.

Flash Memory

185

M16C/26 Group

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Under

development

Preliminary Specifications Rev. 0.9

Specifications in this manual are tentative and subject to change.

Flash Memory

The M16C/26 (flash memory version) contains the flash memory that can be rewritten with a single voltage.

For this flash memory, three flash memory modes are available in which to read, program, and erase:

parallel I/O and standard serial I/O modes in which the flash memory can be manipulated using a program-

mer and a CPU rewrite mode in which the flash memory can be manipulated by the Central Processing Unit

(CPU). Each mode is detailed in the following sections.

The flash memory is divided into several blocks as shown in Figure 1.19.1, so that memory can be erased

one block at a time.

Figure 1.19.1. Block diagram of flash memory (64-Kbyte) version (Note 1)

Note 1: To specify a block, use the maximum address in the block

that is an even address.

Note 2: To access 2Kbyte data blocks, set PM10 to "1".

0F000016

Block B :2K bytes (Note 2)

0FFFFF16

Block 2 : 16K bytes

Block 3 : 32K bytes

User ROM area

Block 1 : 8K bytes

Block 0 : 8K bytes

0FBFFF16

0FC00016

0F7FFF16

0F800016

0FDFFF16

0FE00016

00F00016

00FFFF16

Block A :2K bytes (Note 2)

M16C/26 데이터시트(PDF) 191 Page - Renesas Technology Corp