STY30NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s

Ω

s

EFFICIENT AND RELIABLE MOUNTING

THROUGH CLIP

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

REPETITIVE AVALANCHE TESTED

s

LOW INTRINSIC CAPACITANCE

s

100% AVALANCHE TESTED

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

T he Max247

power package exibiting the same f oot print as t he

industry standard T O-247, but designed to

accomodate much larger silicon chips, normally

supplied in bigger packages such as TO -264. The

increased die capacity makes the device ideal to

reduce component count in multiple paralleled

designs and save board space wit h respect to

larger packages.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES (UPS)

INTERNAL SCHEMATIC DIAGRAM

TYPE

STY30NA50

500 V

< 0. 175

Ω

30 A

March 1996

Max247

TM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

500

V

Ω)

500

V

Gate-source Voltage

± 30

V

A

A

•)

Drain Current (pulsed)

120

A

300

W

Derat ing Factor

2.4

W/

St orage Temperature

-55 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

1/4