전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

12P10G-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 12P10G-TN3-R
상세설명  100V P-CHANNEL MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

12P10G-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  12P10G-TN3-R Datasheet HTML 1Page - Unisonic Technologies 12P10G-TN3-R Datasheet HTML 2Page - Unisonic Technologies 12P10G-TN3-R Datasheet HTML 3Page - Unisonic Technologies 12P10G-TN3-R Datasheet HTML 4Page - Unisonic Technologies 12P10G-TN3-R Datasheet HTML 5Page - Unisonic Technologies 12P10G-TN3-R Datasheet HTML 6Page - Unisonic Technologies 12P10G-TN3-R Datasheet HTML 7Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
12P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-262.a
ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
-9.4
A
Pulsed Drain Current (Note 2)
IDM
-37.6
A
Avalanche Current (Note 2)
IAR
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
370
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.0
V/ns
Power Dissipation
Ta= 25°C
50
W
Derate above 25°C
PD
0.4
W/°C
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
110
℃
/W
Junction-to-Case
θJC
2.5
℃
/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-100
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
ID=-250µA,
Referenced to 25°C
-0.1
V/°C
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-4.7A
0.24
0.29
Ω
Forward Transconductance
gFS
VDS =-40V, ID=-4.7A (Note 1)
6.3
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
620
800
pF
Output Capacitance
COSS
220
290
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1.0MHz
65
85
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
21
27
nC
Gate Source Charge
QGS
4.6
nC
Gate Drain Charge
QGD
VDS=-80V, ID=-11.5A,
VGS=-10V(Note 1, 2)
11.5
nC
Turn-ON Delay Time
tD(ON)
15
40
ns
Turn-ON Rise Time
tR
160
330
ns
Turn-OFF Delay Time
tD(OFF)
35
80
ns
Turn-OFF Fall-Time
tF
VDD=-50V, ID=-11.5A,
RG=25Ω(Note 1, 2)
60
130
ns



Html Pages

1 2 3 4 5 6 7


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com