Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Low Gate Charge

60V

▼ Single Drive Requirement

18mΩ

▼ Surface Mount Package

60A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

Single Pulse Avalanche Energy

3

mJ

A

℃

℃

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

1.4

℃/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

℃/W

Data and specifications subject to change without notice

200803183

Thermal Data

Parameter

Storage Temperature Range

Total Power Dissipation

89

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.7

Avalanche Current

3

38

Pulsed Drain Current

1

230

Gate-Source Voltage

±25

60

Parameter

Rating

Drain-Source Voltage

60

RoHS-compliant Product

1

AP9972GS/P

30

450

G

D

S

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9972GP)

are available for low-profile applications.

G D

S

TO-263(S)

G

D

S

TO-220(P)