ILCT6 datasheet(2/7 Pages) VISHAY

2 / 7 page

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Document Number: 83645

Rev. 1.5, 20-Dec-07

ILCT6/MCT6

Vishay Semiconductors

Optocoupler, Phototransistor Output,

Dual Channel

Note

Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied

at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for

extended periods of the time can adversely affect reliability.

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Rated forward current, DC

Peak forward current, DC

1.0 µs pulse, 300 pps

IFM

3.0

Power dissipation

Pdiss

100

Derate linearly from 25 °C

1.3

mW/°C

OUTPUT

Collector current

Collector emitter breakdown voltage

BVCEO

Power dissipation

Pdiss

150

Derate linearly from 25 °C

2.0

mW/°C

COUPLER

Isolation test voltage

VISO

5300

VRMS

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Creepage distance

≥ 7.0

Clearance distance

≥ 7.0

Total package dissipation

Ptot

400

Derate linearly from 25 °C

5.33

mW/°C

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Lead soldering time at 260 °C

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 20 mA

1.25

1.50

Reverse current

VR = 3.0 V

0.1

µA

Junction capacitance

VF = 0 V

OUTPUT

Collector emitter breakdown voltage

IC = 1.0 µA, IE = 10 µA

BVCEO

Emitter collector breakdown voltage

IC = 10 μA, IE = 10 µA

BVECO

7.0

Collector emitter leakage current

VCE = 10 V

ICEO

1.0

100

Collector emitter capacitance

VCE = 0 V

CCE

8.0

COUPLER

Saturation voltage, collector emitter

IC = 2.0 mA, IF = 16 mA

VCEsat

0.40

Capacitance (input to output)

f = 1.0 MHz

CIO

0.5

Capacitance between channels

f = 1.0 MHz

0.4

Bandwidth

IC = 2.0 mA, VCC = 10 V,

RL = 100 Ω

150

kHz

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