IRLD024 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91308

S-81378-Rev. A, 07-Jul-08

IRLD024, SiHLD024

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

120

°C/W

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.0

Gate-Source Leakage

IGSS

VGS = ± 10 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 5.0 V

ID = 1.5Ab

0.10

VGS = 4.0 V

ID = 1.3 Ab

0.14

Forward Transconductance

gfs

VDS = 25 V, ID = 1.5 Ab

3.7

Dynamic

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V

f = 1.0 MHz, see fig. 5

870

Output Capacitance

Coss

360

Reverse Transfer Capacitance

Crss

-53

Total Gate Charge

VGS = 5.0 V

ID = 17 A, VDS = 48 V

see fig. 6 and 13b

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 17 A

RG = 9.0 Ω, RD = 1.7 Ω, see fig. 10b

-11

Rise Time

110

Turn-Off Delay Time

td(off)

-23

Fall Time

-41

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

2.5

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb

110

260

Body Diode Reverse Recovery Charge

Qrr

0.49

1.5

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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