| 전자부품 데이터시트 검색엔진 |
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M51996AP 데이터시트(PDF) 21 Page - Renesas Technology Corp |
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M51996AP 데이터시트(HTML) 21 Page - Renesas Technology Corp |
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21 / 36 page ![]() M51996AP/AFP REJ03D0836-0201 Rev.2.01 Nov 14, 2007 Page 21 of 35 Supply Voltage VCC (V) 8 7 6 5 4 2 0 3 1 0 5 10 15 25 35 20 30 40 OVP reset point 8.87 V ( −30 °C) 8.94 V (25 °C) 9.23 V (85 °C) Ta = 25 °C Ta = 85 °C Ta = −30 °C Figure 14 Circuit Current vs. Supply Voltage (OVP Operation) Output Section It is required that the output circuit have the high sink and source abilities for MOS FET drive. It is well known that the “totempole circuit has high sink and source ability. However, it has the demerit of high through current. For example, the through current may reach such the high current level of 1 A, if type M51996A has the “conventional” totempole circuit. For the high frequency application such as higher than 100 kHz, this through current is very important factor and will cause not only the large ICC current and the inevitable heat-up of IC but also the noise voltage. This IC uses the improved totempole circuit, so without deteriorating the characteristic of operating speed, its through current is approximately 100 mA. |
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