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SS2PH10 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SS2PH10 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() New Product SS2PH9 & SS2PH10 Vishay General Semiconductor Document Number: 84682 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MECHANICAL DATA Case: DO-220AA (SMP) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 90 V, 100 V IFSM 50 A EAS 11.25 mJ VF at IF = 1.0 A 0.62 V IR max. 1.0 µA TJ max. 175 °C DO-220AA (SMP) eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2PH9 SS2PH10 UNIT Device marking code 29 210 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum average forward rectified current (Fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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