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MBRF3045CT 데이터시트(PDF) 3 Page - Vishay Siliconix |
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MBRF3045CT 데이터시트(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() New Product MBR(F,B)3035CT & MBR(F,B)3045CT Vishay General Semiconductor Document Number: 88677 Revision: 08-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode 100 10 1.0 0.1 0.01 T J = 25 °C T J = 150 °C 0 0.2 0.1 0.5 1.0 0.4 0.3 0.6 0.7 0.8 0.9 Instantaneous Forward Voltage (V) 1.0 10 100 0.01 0.001 0.1 20 0 100 40 60 80 Percent of Rated Peak Reverse Voltage (%) T J = 125 °C T J = 25 °C T J = 75 °C Figure 5. Typical Transient Thermal Impedance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 10 1 100 1000 10 000 100 0.1 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 10 1 100 10 100 0.1 0.1 1 t - Pulse Duration (s) |
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