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MBRB1045 데이터시트(PDF) 1 Page - Vishay Siliconix |
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MBRB1045 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page ![]() Document Number: 93975 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 22-Aug-08 1 Schottky Rectifier, 10 A MBRB10.. Series Vishay High Power Products FEATURES • 150 °C TJ operation •D2PAK package • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for Q101 level DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 10 A VR 35/45 V IRM 15 mA at 125 °C D2PAK Anode 1 3 Base cathode 2 N/C MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 10 A IFRM TC = 135 °C 20 VRRM 35/45 V IFSM tp = 5 µs sine 1060 A VF 10 Apk, TJ = 125 °C 0.57 V TJ Range - 65 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL MBRB1035 MBRB1045 UNITS Maximum DC reverse voltage VR 35 45 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) TC = 135 °C, rated VR 10 A Peak repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 135 °C 20 Non-repetitive surge current IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 1060 Surge applied at rated load conditions halfwave, single phase, 60 Hz 150 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 2A |
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