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ST083SPBF 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 ST083SPBF
상세설명  Inverter Grade Thyristors (Stud Version), 85 A
PDF  9 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

ST083SPBF 데이터시트(HTML) 2 Page - Vishay Siliconix

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Document Number: 94334
2
Revision: 25-Jul-08
ST083SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 85 A
CURRENT CARRYING CAPABILITY
FREQUENCY
UNITS
50 Hz
210
120
330
270
2540
1930
A
400 Hz
200
120
350
210
1190
810
1000 Hz
150
80
320
190
630
400
2500 Hz
70
25
220
85
250
100
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
VDRM
VDRM
VDRM
Rise of on-state current dI/dt
50
50
----
A/µs
Case temperature
60
85
60
85
60
85
°C
Equivalent values for RC circuit
22/0.15
22/0.15
22/0.15
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current at
case temperature
IT(AV)
180° conduction, half sine wave
85
A
85
°C
Maximum RMS on-state current
IT(RMS)
DC at 77 °C case temperature
135
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
2450
t = 8.3 ms
2560
t = 10 ms
100 % VRRM
reapplied
2060
t = 8.3 ms
2160
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
30
kA2s
t = 8.3 ms
27
t = 10 ms
100 % VRRM
reapplied
21
t = 8.3 ms
19
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
300
kA2
√s
Maximum peak on-state voltage
VTM
ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
2.15
V
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
1.46
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.52
Low level value of forward slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
2.32
m
Ω
High level value of forward slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
2.34
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM



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