| 전자부품 데이터시트 검색엔진 |
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THBT200S1 데이터시트(PDF) 3 Page - STMicroelectronics |
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THBT200S1 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() Symbol Parameter VRM Stand-off voltage IRM Leakage current at VRM VBR Continuous reverse voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb=25 °C) Ipp I V IBO IH VRM VBR VBO IRM IRM @VRM VBR @IR VBO @ IBO IH C max. min. max. min. max. min. max. note 1 note 2 note 3 µA V V mA V mA mA mA pF 10 180 200 1 290 150 800 150 200 Note 1 : See reference test circuit 1 for IH, IBO and VBO parameters. Note 2 : See test circuit 2. Note 3 : VR = 1V, F = 1MHz. 1 - PARAMETERS RELATED TO ONE TRISIL. (Between TIP and GND or RING and GND) IRM @VRM C max. max. µAV pF 10 180 200 2 - PARAMETERS RELATED TO TIP and RING TRISIL. ® THBT200S1 3/7 |
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