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THBT15011DRL 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 THBT15011DRL
상세설명  TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

THBT15011DRL 데이터시트(HTML) 1 Page - STMicroelectronics

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Application Specific Discretes
A.S.D
.™
THBTxxx11D
®
n
BIDIRECTIONAL CROWBAR PROTECTION
BETWEEN TIP AND GND, RING AND GND
AND BETWEEN TIP AND RING.
n
PEAK PULSE CURRENT :
IPP = 30A for 10/1000
µs surge.
n
HOLDING CURRENT :
IH = 150mA.
n
AVAILABLE IN SO8 PACKAGES.
n
LOW DYNAMIC BREAKOVER VOLTAGE.
FEATURES
SO-8
Dedicated
to
telecommunication
equipment
protection,
these
devices
provide
a
triple
bidirectional protection function.
They ensure the same protection capability with
the same breakdown voltage both in longitudinal
mode and transversal mode.
A particular attention has been given to the internal
wire bonding. The “4-point” configuration ensures
a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very fast transient
overvoltages.
Dynamic characteristics have been defined for
several types of surges, in order to meet the SLIC
maximum ratings.
DESCRIPTION
SCHEMATIC DIAGRAM
TRIPOLAR OVERVOLTAGE
PROTECTION FOR TELECOM LINE
October 2003 - Ed: 7A
TR-NWT-001089:
10/1000
µs
1000V
2/10
µs
2500V
(first level)
2/10
µs
5000V
(second level)
with line series resistors of 56
Ω
COMPLIES WITH BELLCORE STANDARDS :
2
GND
3
GND
1
TIP
4
RING
7 GND
6 GND
8 TIP
5 RING
TM: ASD is trademarks of STMicroelectronics.


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