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TCST2103 데이터시트(PDF) 3 Page - Vishay Siliconix |
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TCST2103 데이터시트(HTML) 3 Page - Vishay Siliconix |
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3 / 9 page ![]() TCST1103/1202/1300/2103/2202/2300 Document Number 83764 Rev. 1.8, 16-Aug-06 Vishay Semiconductors www.vishay.com 3 Output (Detector) Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 10 µA VECO 7V Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO 100 nA Parameter Test condition Symbol Min Typ. Max Unit Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 10.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 8.0 µs Figure 1. Test circuit for ton and toff Figure 2. Switching Times Channel I Channel II 95 10890 + 5 V IC = 2 mA; adjusted by I IF 0 IF RG = 50 Ω tp t p T =0.01 Oscilloscope R 1 M Ω L ≥ CL ≤ 20 pF 50 Ω 100 Ω = 50 µs F tp t t 0 0 10 % 90 % 100 % tr td ton ts tf toff IF IC 96 11698 tp pulse duration td delay time tr rise time ton (=t + t ) d r turn-on time ts storage time tf fall time toff (= ts +tf)turn-off time Figure 3. Power Dissipation Limit vs. Ambient Temperature 0 0 100 200 300 400 95 11088 Tamb - Ambient Temperature (°C) Coupled device Phototransistor IR - diode 150 120 90 60 30 |
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