TIP35C datasheet(2/4 Pages) STMICROELECTRONICS

부품명	TIP35C

상세설명	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

PDF	4 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 60 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

ICES

Collector Cut-off

Current (VBE = 0)

VCE = Rated VCEO

0.7

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

for TIP36B

for TIP35C/36C

100

hFE*

DC Current Gain

IC = 1.5 A

VCE = 4 V

IC = 15 A

VCE = 4 V

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 15 A

IB = 1.5 A

IC = 25 A

IB = 5 A

1.8

VBE(on)*

Base-Emitter Voltage

IC = 15 A

VCE = 4 V

IC = 25 A

VCE = 4 V

Transition Frequency

IC = 1 A

VCE = 10 V

f = 1 MHz

MHz

hfe

Small Signal Current

Gain

IC = 1 A

VCE = 10 V

f = 1 KHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

For PNP types voltage and current values are negative.

TIP35C / TIP36B / TIP36C

2/4

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