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TLC116S 데이터시트(PDF) 1 Page - STMicroelectronics |
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TLC116S 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() TLC116 ---> TLC386 T/D/S/A February 1999 Ed: 1A SENSITIVE GATE TRIACS ® Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) Tl = 40 °C3 A Ta = 25 °C 1.3 (1) ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) tp = 8.3 ms 31.5 A tp = 10 ms 30 I2tI2t value tp = 10 ms 4.5 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 10 A/ µs Non Repetitive 50 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 °C °C Tl Maximum lead temperature for soldering during 4 s at 4.5 mm from case 230 °C TL (Plastic) . VERY LOW IGT = 5mA max . LOW IH = 15mA max DESCRIPTION Symbol Parameter TLC Unit 116 T/D/S/A 226 T/D/S/A 336 T/D/S/A 386 T/D/S/A VDRM VRRM Repetitive peak off-state voltage Tj = 110 °C 200 400 600 700 V ABSOLUTE RATINGS (limiting values) FEATURES The TLC116 ---> TLC386 T/D/S/A triac family uses a high performance glass passivated PNPN technology. These parts are suitable for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static (1) With Cu surface 1cm 2. A1 G A2 1/5 |
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