TN22

4/7

T(av)

I(A)

= 180

o

=120

o

=60

o

=30

o

=90

o

0.2 0.4

0.6 0.8

1.2

1.4

1.6 1.8 2

1

T(av)

P(W)

0

0

1

2

3

4

5

6

Fig.1 : Maximum average power dissipation ver-

sus average on-state current (rectified full sine

wave).

10

20

30 40

50

60

70 80

90 100 110

0.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Tcase ( C)

o

T(av)

I(A)

=180

o

Fig.3 : Average on-state current versus case tem-

perature (rectified full sine wave).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Igt

Tj( C)

o

Ih

-40

-20

0

20

40

60

80

100

120

140

Igt[Tj]

Igt[Tj=25 C]

o

Ih[Tj]

Ih[Tj=25 C]

o

Fig.5 : Relative variation of gate trigger current

and holding current versus junction temperature.

0

0

1

2

3

4

5

6

=180

o

Tcase ( C)

o

Rth=12 C/W

o

Rth=8 C/W

o

Rth=4 C/W

o

Rth=0 C/W

o

10

20

30

40

50

60

70

80

90 100 110

T(av)

P(W)

Fig.2 : Correlation between maximum average

power dissipation and maximum allowable tem-

perature (Tamb and Tcase) for different thermal

resistances heatsink + contact.

1.0E-02

1.0E-01 1 .0E +00 1.0E+01 1 .0E +02 1 .0E +03

1.0E-01

1.0E +00

1.0E+01

1.0E +02

Zth(j-a)(oC/W)

tp(S)

Fig.4 : Thermal transient impedance junction to

ambient versus pulse duration.

1

10

100

1000

0

2

4

6

8

10

12

14

16

18

20

Tj initial = 25 C

F= 50Hz

o

Number of cycles

I(A)

TSM

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.