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TODV640 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 TODV640
상세설명  ALTERNISTORS
PDF  5 Pages
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TODV640 데이터시트(HTML) 1 Page - STMicroelectronics

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TODV 640 ---> 1240
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
° conduction angle)
Tc = 75
°C40
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°C)
tp = 2.5 ms
590
A
tp = 8.3 ms
370
tp = 10 ms
350
I2tI2t value
tp = 10 ms
610
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
20
A/
µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
RD91
(Plastic)
.
HIGH COMMUTATION : > 142 A/ms (400Hz)
.
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB1734)
.
HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
DESCRIPTION
Symbol
Parameter
TODV
Unit
640
840
1040
1240
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
600
800
1000
1200
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TODV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
A2
G
A1
1/5


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