| 전자부품 데이터시트 검색엔진 |
|
MP3V5004GP 데이터시트(PDF) 3 Page - Freescale Semiconductor, Inc |
|
|
|||||||||||||||||||||||||||||
MP3V5004GP 데이터시트(HTML) 3 Page - Freescale Semiconductor, Inc |
|
3 / 14 page ![]() Sensors Freescale Semiconductor 3 MP3V5004G ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature compensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the gauge configuration in the basic chip carrier (Case 482). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. The MP3V5004G series sensor operating characteristics are based on use of dry air as pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Internal reliability and qualification test for dry air, and other media, are available from the factory. Contact the factory for information regarding media tolerance in your application. Figure 3 shows the recommended decoupling circuit for interfacing the output of the MP3V5004G to the A/D input of the microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4 shows the sensor output signal relative to pressure input. Typical, minimum and maximum output curves are shown for operation over a temperature range of 10 °C to 60°C using the decoupling circuit shown in Figure 3 The output will saturate outside of the specified pressure range. Figure 2. Cross-Sectional Diagram (Not to Scale) Figure 3. Recommended Power Supply Decoupling and Output Filtering. (For additional output filtering, please refer to Application Note AN1646.) Figure 4. Output versus Pressure Differential at ±2.5% VFSS (See Note 5 in Operating Characteristics) Fluorosilicone Gel Die Coat Wire Bond Die P1 Stainless Steel Cap Thermoplastic Case Die Bond Differential Sensing Element P2 Lead Frame +3 V 1.0 μF 0.01 μF 470 pF GND Vs Vout IPS OUTPUT 3.0 1.0 2.0 0.6 Max Min Typical 2 kPa 200 mm H2O 4 kPa 400 mm H2O TRANSFER FUNCTION: Vout = VS*[(0.2*P) + 0.2] ± 2.5% VFSS VS = 3.0 V ± 0.30 Vdc TEMP = 10 to 60°C |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |