MPC5510 datasheet(35/54 Pages) FREESCALE

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Electrical Characteristics

MPC5510 Microcontroller Family Data Sheet, Rev. 2

Preliminary—Subject to Change Without Notice

Freescale Semiconductor

2.11

Flash Memory Electrical Characteristics

Table 16. Flash Program and Erase Specifications1

1 Typical program and erase times assume nominal supply values and operation at 25 oC.

Num

Characteristic

Symbol

Min

Typ

Initial

Max2

2 Initial factory condition:

< 100 program/erase cycles, nomial supply values and operation at 25 oC.

Max3

3 The maximum time is at worst case conditions after the specified number of program/erase cycles. This maximum value is

characterized but not guaranteed.

Unit

Double Word (64 bits) Program Time 4

4 This does not include software overhead.

Tdwprogram

—

500

μs

Page (128 bits) Program Time 4

Tpprogram

—

500

μs

16 Kbyte Block Pre-program and Erase Time

T16kpperase

—

325

525

5000

64 Kbyte Block Pre-program and Erase Time

T64kpperase

—

525

675

5000

128 Kbyte Block Pre-program and Erase Time

T128kpperase

—

675

1800

7500

Minimum operating frequency for program and erase

operations

—25

—

MHz

Wait States Relative to System Frequency

PFCRPn[RWSC] = 0b000; PFCRPn[WWSC] = 0b01

PFCRPn[RWSC] = 0b001; PFCRPn[WWSC] = 0b01

PFCRPn[RWSC] = 0b010; PFCRPn[WWSC] = 0b01

PFCRPn[RWSC] = 0b011; PFCRPn[WWSC] = 0b01

Trwsc

—

MHz

8Recovery Time

Stop mode exit or STOP bit negated

Sleep mode exit (with CRP_RECPTR[FASTREC]=1) 5

5 If CRP_RECPTR[FASTREC]=0, then hardware will wait 2340 system clocks before exiting from Sleep mode to account for the

flash recovery time. The default system clock source after Sleep is the 16MIRC. A nominal frequency of 16MHz equates to a

hardware wait of 146

μs.

Trecover

—

120

μs

Table 17. Flash EEPROM Module Life (Full Temperature Range)

Num

Characteristic

Symbol

Min

Typical1

1 Typical endurance is evaluated at 25C. Product qualification is performed to the minimum specification. For additional

information on the Freescale definition of Typical Endurance, please refer to Engineering Bulletin EB619 “Typical Endurance

for Nonvolatile Memory.”

Unit

Number of Program/Erase cycles per block over the operating

temperature range (TJ)

16 Kbyte and 64 Kbyte blocks

128 Kbyte blocks

P/E

100,000

1000

—

100,000

cycles

Data retention

Blocks with 0 – 1,000 P/E cycles

Blocks with 1,001 – 100,000 P/E cycles

Retention

—years

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