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MPC5633MMLL80 데이터시트(PDF) 72 Page - Freescale Semiconductor, Inc |
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MPC5633MMLL80 데이터시트(HTML) 72 Page - Freescale Semiconductor, Inc |
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72 / 106 page ![]() MPC5634M Microcontroller Data Sheet, Rev. 8 Freescale Semiconductor 72 4.4 Electromagnetic Interference (EMI) characteristics 4.5 Electromagnetic static discharge (ESD) characteristics Table 12. EMI testing specifications1 1 IEC Classification Level: L = 24dBuV; K = 30dBuV. Symbol Parameter Conditions fOSC/fBUS Frequency Level (Typ) Unit Radiated Emissions VEME Device Configuration, test conditions and EM testing per standard IEC61967-2; Supply Voltage = 5.0V DC, Ambient Temperature = 25°C, Worst-case Orientation Oscillator Frequency = 8 MHz; System Bus Frequency = 80 MHz; No PLL Frequency Modulation 150 kHz – 50 MHz 26 dB V 50–150 MHz 24 150–500 MHz 24 500–1000 MHz 21 IEC Level K — Oscillator Frequency = 8 MHz; System Bus Frequency = 80 MHz; 1% PLL Frequency Modulation 150 kHz – 50 MHz 20 dB V 50–150 MHz 19 150–500 MHz 14 500–1000 MHz 7 IEC Level L — Table 13. ESD ratings1,2 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification requirements, which includes the complete DC parametric and functional testing at room temperature and hot temperature.” Symbol Parameter Conditions Value Unit — SR ESD for Human Body Model (HBM) — 2000 V R1 SR HBM circuit description — 1500 CSR — 100 pF — SR ESD for field induced charge Model (FCDM) All pins 500 V Corner pins 750 — SR Number of pulses per pin Positive pulses (HBM) 1 — Negative pulses (HBM) 1 — — SR Number of pulses — 1 — |
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