2PD602ARLSLASHDG datasheet(4/9 Pages) NXP

4 / 9 page

2PD602AXL_1

Product data sheet

Rev. 01 — 27 October 2008

4 of 9

NXP Semiconductors

2PD602AxL

50 V, 500 mA NPN general-purpose transistors

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Test information

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualiﬁcation for discrete semiconductors, and is

suitable for use in automotive applications.

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current VCB =60V; IE = 0 A

--10

VCB =60V; IE =0A;

Tj = 150 °C

--5

µA

IEBO

emitter-base cut-off current

VEB =4V; IC = 0 A

--10

hFE

DC current gain

VCE =10V;

IC = 500 mA

[1] 40

hFE group Q

VCE =10V;

IC = 150 mA

[1] 85

170

hFE group R

VCE =10V;

IC = 150 mA

[1] 120

240

hFE group S

VCE =10V;

IC = 150 mA

[1] 170

340

VCEsat

collector-emitter saturation

voltage

IC = 300 mA;

IB =30mA

[1] -

600

transition frequency

VCE =10V;

IC = 50 mA;

f = 100 MHz

[1]

hFE group Q

140

MHz

hFE group R

160

MHz

hFE group S

180

MHz

collector capacitance

VCB =10V;

IE =ie =0A;

f=1MHz

--15

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