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TXDV408 데이터시트(PDF) 1 Page - STMicroelectronics |
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TXDV408 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() TXDV 408 ---> 808 March 1995 ALTERNISTORS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) Tc = 90 °C8 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C ) tp = 2.5 ms 115 A tp = 8.3 ms 85 tp = 10 ms 80 I2tI2t value tp = 10 ms 32 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 20 A/ µs Non Repetitive 100 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G . VERY HIGH COMMUTATION : > 28 A/ms (400Hz) . INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) . dV/dt : 500 V/ µs min DESCRIPTION Symbol Parameter TXDV Unit 408 608 808 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 800 V ABSOLUTE RATINGS (limiting values) FEATURES The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge cur- rent capability, this family is well adapted to power control on inductive load (motor, transformer...) 1/5 |
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