ABSOLUTE MAXIMUM RATINGS

(1)

POWER DISSIPATION RATINGS

THERMAL CHARACTERISTICS

KEY ATTRIBUTES

SN65LVELT22

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

VALUE

UNIT

GND = 0 V

6

V

6

V

Continuous

50

Output current

mA

Surge

100

Operating temperature range

–40 to 85

°C

Storage temperature range

–65 to 150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

POWER RATING

THERMAL RESISTANCE,

DERATING FACTOR

POWER RATING

CIRCUIT BOARD

JUNCTION TO AMBIENT

PACKAGE

MODEL

NO AIRFLOW

(mW)

(mW/°C)

(mW)

SOIC

Low-K

719

139

7

288

High-K

840

119

8

336

SOIC-TSSOP

Low-K

469

213

5

188

High-K

527

189

5

211

PARAMETER

PACKAGE

VALUE

UNIT

θ

JB

Junction-to Board Thermal Resistance

SOIC

79

°C/W

SOIC-TSSOP

120

θ

JC

Junction-to Case Thermal Resistance

SOIC

98

°C/W

SOIC-TSSOP

74

CHARACTERISTICS

VALUE

Moisture sensitivity level

Level 1

Flammability rating (Oxygen Index: 28 to 34)

UL 94 V-0 at 0.125 in

ESD-HBM

4 kV

ESD-machine model

200 V

ESD-charge device model

2 kV

Meets or exceeds JEDEC Spec EIA/JESD78 latchup test

2

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