| 전자부품 데이터시트 검색엔진 |
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VN410 데이터시트(PDF) 2 Page - STMicroelectronics |
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VN410 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() ABSOLUTE MAXIMUM RATING Symb ol Parameter Value Uni t -Vbat Reverse Supply Voltage -12 V VBR( DSS) Drain-Source Breakdown Voltage 60 (Int ernally clamped) V Vp1 Breakdown Volt age in Pad : LEDEM (Vbat <15V) (Vbat > 15V) Vbat 15 V V Ip1 Breakdown Current in Pad : RT, CT , ROL LDIR, RDI R +/- 10 -10/+100 mA mA IOut Maximum DC Load Current 15 A Vgnd Voltage Drop Between ground connect ions (see note 1) 0.4 V IR Reverse Output Current -15 A Vesd Electrostatic Discharge (R = 1.5 k Ω, C = 100 pF) 2000 V Ptot Power Dissipation at Tc ≤ 25 oC I nternally Limited W Tj Junct ion Operating Temperature I nternally Limited oC Tstg St orage Temperature -55 t o 150 oC Note 1: In case the voltage drops beetween ground connection exceed 0.4V, extenal resistors in series with EM pin and AL pin are needed (if these pins are used) to prevent damages to the device. The value of these resistors is 100 Ω. CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS VN410 2/11 |
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