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VNH100N04 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 VNH100N04
상세설명  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  7 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNH100N04 데이터시트(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =15 V
Id =30 A
Vgen =10 V
Rgen =10
Ω
(see figure 3)
100
400
900
400
TBD
TBD
TBD
TBD
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =15 V
Id =30 A
Vgen =10 V
Rgen =10
Ω
Tj =125
oC
(see figure 3)
TBD
TBD
TBD
TBD
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =15 V
Id =30 A
Vgen =10 V
Rgen =1000
Ω
(see figure 3)
TBD
TBD
TBD
TBD
µs
µs
µs
µs
(di/dt) on
Turn-on Current Slope
VDD =15 V
ID =30 A
Vin =10 V
TBD
A/
µs
Qg
Total Gate Charge
VDD =12 V
ID =30 A
Vin =10 V
TBD
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VSD (
∗)
Forward On Volt age
ISD =30 A
Vin =0
TBD
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 30 A
di/dt = 100 A/
µs
VDD =V
Tj = 150
oC
(see test circuit, figure 5)
TBD
TBD
TBD
ns
µC
A
PROTECTION
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
Ilim
Drain Current Limit
Vin =10 V
VDS = 13 V
70
100
140
A
tdlim
St ep Response
Current Limit
Vin =10 V
VDS =13V
TBD
µs
Tjsh
Overtemperature
Shutdown
150
170
190
oC
Tjrs
Overtemperature Reset
135
oC
Igf
Fault Sink Current
Vin =10 V
VDS =13 V
50
mA
Eas
Single Pulse
Avalanche Energy
st arting Tj =25
oCV
DD =20 V
Vin =10 V Rgen =1 K
Ω L= mH
TBD
J
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VNH100N04
3/7



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