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VNP49N04 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 VNP49N04
상세설명  O"MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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VNP49N04 데이터시트(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
∗∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =15 V
Id =25 A
Vgen =10 V
Rgen =10
Ω
(see f igure 3)
200
1300
800
300
300
1800
1200
450
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =15 V
Id =25 A
Vgen =10 V
Rgen = 1000
Ω
(see f igure 3)
1.3
3.8
12
6.1
1.9
5.2
14
8.5
µs
µs
µs
µs
(di/ dt)on
Turn-on Current Slope
VDD =15 V
ID =25 A
Vin =10 V
Rgen =10
Ω
25
A/
µs
Qi
Total Input Charge
VDD =15 V
ID =25 A
Vin = 10 V
100
nC
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VSD (
∗)Forward On Voltage
ISD =25 A
Vin =0
1.6
V
trr (
∗∗)
Qrr (
∗∗)
IRRM (
∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 25 A
di/dt = 100 A/
µs
VDD =30 V
Tj =25
oC
(see t est circuit, figure 5)
250
910
7.5
ns
nC
A
PROTECTION
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
Ilim
Drain Current Limit
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
30
30
49
49
68
68
A
A
tdlim (
∗∗) Step Response
Current Limit
Vin =10 V
Vin =5 V
35
90
50
150
µs
µs
Tjsh (
∗∗) Overtemperature
Shutdown
150
oC
Tjrs (
∗∗) Overtemperature Reset
135
oC
Igf (
∗∗)
Fault Sink Current
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
50
20
mA
mA
Eas (
∗∗) Single Pulse
Avalanche Energy
st arting Tj =25
oCVDD =20 V
Vin =10 V
Rgen =1 K
Ω L= 6 mH
4J
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
∗∗) Parameters guaranteed by design/characterization
VNP49N04
3/11



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