VNQ830M datasheet(9/20 Pages) STMICROELECTRONICS

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VNQ830M

GND

PROTECTION

NETWORK

AGAINST

REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This

can be used with any type of load.

The following is an indication on how to dimension the

RGND resistor.

1) RGND ≤ 600mV / 2(IS(on)max).

2) RGND ≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can

be found in the absolute maximum rating section of the

device’s datasheet.

Power Dissipation in RGND (when VCC<0: during reverse

battery situations) is:

PD= (-VCC)

2/R

GND

This resistor can be shared amongst several different

HSD. Please note that the value of this resistor should be

calculated with formula (1) where IS(on)max becomes the

sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not

common with the device ground then the RGND will

produce a shift (IS(on)max * RGND) in the input thresholds

and the status output values. This shift will vary

depending on how many devices are ON in the case of

several high side drivers sharing the same RGND.

If the calculated power dissipation leads to a large resistor

or several devices have to share the same resistor then

the ST suggests to utilize Solution 2.

VCC1,2

OUTPUT2

+5V

Rprot

OUTPUT1

STATUS1

INPUT1

+5V

STATUS2

INPUT2

+5V

DGND

RGND

VGND

GND1,2

GND3,4

OUTPUT3

OUTPUT4

µC

VCC3,4

STATUS3

INPUT3

STATUS4

INPUT4

+5V

Rprot

Dld

Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

APPLICATION SCHEMATIC

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