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HV310 데이터시트(PDF) 2 Page - Supertex, Inc

부품명 HV310
상세설명  Hotswap, Inrush Current Limiter Controllers
PDF  6 Pages
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제조업체  SUTEX [Supertex, Inc]
홈페이지  http://www.supertex.com
Logo SUTEX - Supertex, Inc

HV310 데이터시트(HTML) 2 Page - Supertex, Inc

  HV310 Datasheet HTML 1Page - Supertex, Inc HV310 Datasheet HTML 2Page - Supertex, Inc HV310 Datasheet HTML 3Page - Supertex, Inc HV310 Datasheet HTML 4Page - Supertex, Inc HV310 Datasheet HTML 5Page - Supertex, Inc HV310 Datasheet HTML 6Page - Supertex, Inc  
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HV300/HV310
2
Electrical Characteristics (V
IN=-10V to -90V, -40
°C ≤ T
A ≤ +85°C unless otherwise noted)
Symbol
Parameters
Min
Typ
Max
Unit
Conditions
Supply (Referenced to V
DD pin)
VEE
Supply Voltage
-90
-10
V
IEE
Supply Current
550
650
µAVEE = -48V, Mode = Limiting
IEE
Standby Mode Supply Current
330
400
µAVEE = -48V, Mode = Standby
OV and UV Control (Referenced to V
EE pin)
VUVH
UV High Threshold
1.26
V
Low to High Transition
VUVL
UV Low Threshold
1.16
V
High to Low Transition
VUVHY
UV Hysteresis
100
mV
IUV
UV Input Current
1.0
nA
VUV = VEE + 1.9V
VOVH
OV High Threshold
1.26
V
Low to High Transition
VOVL
OV Low Threshold
1.16
V
High to Low Transition
VOVHY
OV Hysteresis
100
mV
IOV
OV Input Current
1.0
nA
VOV = VEE + 0.5V
Current Limit (Referenced to V
EE pin)
VSENSE
Current Limit Threshold Voltage
40
50
60
mV
VUV = VEE + 1.9V,
VOV = VEE + 0.5V
Gate Drive Output (Referenced to V
EE pin)
VGATE
Maximum Gate Drive Voltage
9.0
10
11
V
VUV = VEE + 1.9V,
VOV = VEE + 0.5V
IGATEUP
Gate Drive Pull-Up Current
500
µAVUV = VEE + 1.9V,
VOV = VEE + 0.5V,
IGATEDOWN
Gate Drive Pull-Down Current
40
mA
VUV = VEE, VOV = VEE + 0.5V
Power Good Output (Referenced to V
EE pin)
VPWRGD
Power Good Pin Breakdown Voltage
90
V
VPWRGD
Power Good Pin Output Low Voltage
0.5
0.8
V
IPWRGD = 1mA
Dynamic Characterstics
tGATEHLOV
OV Delay
500
ns
tGATEHLUV
UV Delay
500
ns
Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET.
V
GS(th) = 3V for an IRF530.
*IRF530 is a registered trademark of International Rectifier.
Timing Control – Test Conditions: C =100µF, C
RAMP=10nF, VUV = VEE+1.9V, VOV= VEE+0.5V, External MOSFET is IRF530*
IRAMP
Ramp Pin Output Current
10
µAVSENSE = 0V
tPOR
Time from UV to Gate Turn On
2.0
ms
(Note 1)
tRISE
Time from Gate Turn On to VSENSE Limit
400
µs
tLIMIT
Duration of Current Limit Mode
5.0
ms
tPWRGD
Time from Current Limit to PWRGD
5.0
ms
VRAMP
Voltage on Ramp Pin in Current Limit Mode
3.6
V
(Note 2)



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