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2SA1682 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1682 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = -200V , IE =0 -0.1 ìA Emitter cutoff current IEBO VEB =-4V , IC =0 -0.1 ìA hFE 1 VCE =-6V , IC = -0.1 mA 100 320 hFE 2 VCE =-6V , IC =-1mA 100 Gain bandwidth product fT VCE =-30V , IC =-10 mA 70 MHz Collector-emitter saturation voltage VCE(sat) IC =-10mA , IB =-3mA -1.0 V Base-emitter saturation voltage VBE(sat) IC =-10mA , IB =-3mA -1.0 V Collector-to-base breakdown voltage V(BR)CBO IC =-10ìA , IE =0 -300 V Collector-to-emitter breakdown voltage V(BR)CEO IC =-1mA , RBE = -300 V Emitter-base breakdown voltage V(BR)EBO IE =-10ìA , IC =0 -5 V Output capacitance Cob VCB = -30V , f = 1MHz 2.4 pF Reverse transfer capacitance Cre VCB = -30V , f = 1MHz 1.5 pF DC current gain ratio hFE ratio hFE1/ hFE21.0 DC current gain hFE Classification Marking Rank 4 5 hFE 100 200 160 320 CS 2SA1682 |
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