MMBT5550 datasheet(2/2 Pages) KEXIN

부품명	MMBT5550

상세설명	High Voltage Transistors

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제조업체	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

홈페이지	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

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MMBT5550

Marking

M1F

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector?emitter breakdown voltage *

V(BR)CEO IC =1.0 mA, IB = 0

140

Collector?base breakdown voltage

V(BR)CBO IC = 100 ìA, IE = 0

160

Emitter ?base breakdown voltage

V(BR)EBO IE =10ìA, IC =0

VCB = 100 V, IE = 0

100

VCB = 100 V, IE = 0, Ta = 100

100

ìA

Emitter cutoff current

IEBO

VEB =4.0 V, IC = 0

IC =1.0 mA, VCE =5V

IC =10mA, VCE = 5 V

250

IC =50mA, VCE =5V

IC =10mA, IB = 1.0 mA

0.15

IC =50mA, IB = 5.0 mA

0.25

IC =10mA, IB =1.0 mA

1.0

IC =50mA, IB =5.0 mA

1.2

VCB = 10 V

VCB = 75 V

100

* Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%.

VCE(sat)

VBE(sat)

ICES

Collector emitter cut-off

Base-emitter saturation voltage

Collector-emitter saturation voltage

ICBO

Collector cutoff current

hFE

DC current gain

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