| 전자부품 데이터시트 검색엔진 |
|
2PB710AS 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
|
|
|||||||||||||||||||||||||||||
2PB710AS 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
|
2 / 2 page ![]() www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0; VCB = -60 V -10 nA IE =0; VCB =-60 V; Tj = 150 -5 ìA Emitter cut-off current IEBO IC =0; VEB =-5V -10 nA DC current gain 2PB710AQ 85 170 2PB710AR 120 240 2PB710AS 170 340 DC current gain IC = -500 mA; VCE =-10 V; * 40 Collector-emitter saturation voltage VCEsat IC = -300 mA; IB = -30 mA * -600 mV Base-emitter saturation voltage VBEsat IC = -300 mA; IB = -30 mA * -1.5 V Collector capacitance Cc IE =ie =0; VCB = -10 V; f = 1 MHz 15 pF Transition frequency 2PB710AQ 100 2PB710AR 120 2PB710AS 140 *. Pulse test: tp 300 ìs; ä 0.02. ICBO Collector cut-off current hFE IC = -150 mA; VCE =-10 V* fT IC =-50 mA; VCE = -10 V; f = 100 MHz* MHz 2PB710A Marking Type Number 2PB710AQ 2PB710AR 2PB710AS Marking DQ DR DS |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |