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FMMT495 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FMMT495 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 170 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 150 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5V Collector Cut-Off Currents ICBO VCB=150V 100 nA Collector Cut-Off Currents ICES VCE=150V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA Collector-emitter saturation voltage * VCE(sat) IC=250mA,IB=25mA IC=500mA,IB=50mA 0.2 0.3 V Base-emitter saturation voltage * VBE(sat) IC=500mA,IB=50mA 1.0 V Base-emitter voltage * VBE(ON) IC=500mA,VCE=10V 1.0 V IC=1mA, VCE=10V 100 IC=250mA, VCE=10V* 100 300 IC=500mA, VCE=10V* 50 IC=1A, VCE=10V* 10 Transition Frequency fT IC=50mA,VCE=10V,f=100MHz 100 MHz Collector-Base Breakdown Voltage Cobo VCB=10V,f=1MHz 10 pF * Pulse test: tp = 300 ìs; d 0.02. Static Forward Current Transfer Ratio hFE Marking Marking 495 FMMT495 |
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