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2SD1821 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1821 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page ![]() SMD Type Transistors 1 www.kexin.com.cn 1 Emitter 2 Base 3 Collector Silicon NPN Epitaxial Planar Type 2SD1821 Features High collector-emitter voltage VCEO Low noise voltage NV Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5V Peak collector current ICP 100 A Collector current IC 50 A Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC = 100 ìA, IB = 0 150 V Emitter-base voltage VEBO IE =10ìA, IC =0 5 V Collector-base cutoff current ICBO VCB = 100 V, IE =0 1 ìA Forward current transfer ratio hFE VCE =5V, IC = 10 mA 130 330 Collector-emitter saturation voltage VCE(sat) IC =30mA, IB =3mA V Transition frequency fT VCB =10V, IE = -10 mA, f = 200 MHz 150 MHz Collector output capacitance Cob VCB =10V, IE = 0,f= 1 MHz 2.3 pF Noixe voltage NV VCE =10V, IC =1mA, GV =80dB, Rg = 100KÙ , Function = FLAT 150 mV hFE Classification Marking Rank Q R hFE 130 220 185 330 P |
유사한 부품 번호 - 2SD1821 |
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유사한 설명 - 2SD1821 |
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