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HVC136 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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HVC136 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page ![]() SMD Type www.kexin.com.cn 1 Diodes SOD-523 Unit: mm 0.77max 0.6+0.1 -0.1 1.2+0.1 -0.1 1.6+0.1 -0.1 +- Silicon Epitaxial Trench Pin Diode HVC136 Features Adopting the trench structure improves low capacitance.(C = 0.45 pF max) Low forward resistance. (rf=2.5 max) Low operation current. A b solu te M a xim u m R atings T a = 2 5 P a ra m e te r S y m bol V a lu e U nit P eak re v e rs e v oltage V RM 65 V R e v e rs e v oltage V R 60 V F o rw ard c urrent IF 100 m A P o w e r d issipatio n P d 150 m W Junction te m perature T j 125 S torage te m perature T stg -5 5 to + 125 Electrical C haracteristics T a = 25 P aram eter S ym bol Conditions M in Typ M ax Unit Reverse current IR V R =60 V 0.1 A Reverse voltage V F IF =2 m A 0.9 V Capacitance C V R = 1 V , f = 1 M Hz 0.45 pF Forward resistance rf IF = 2 m A , f = 100 M Hz 2.5 Note 1. Failure criterion ; IR > 100 nA at V R =60V . V E S D-Capability *1 C =200pF, B oth forward and reverse direction 1 pulse 100 Marking Marking P6 |
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