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2SD596 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD596 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page ![]() SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Silicon Epitaxial Transistor 2SD596 Features Micro package. High dc current gain. hFE:200TYP. (VCE=1V, IC=100mA) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 5V Collector current (DC) IC 700 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature range Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =30V, IE = 0 100 nA Emitter cutoff current IEBO VEB =5.0 V, IC = 0 100 nA DC current gain * hFE VCE =1.0 V, IC = 100 mA 110 200 400 Base to emitter voltage * VBE VCE =6.0 V, IC = 10 mA 600 640 700 mV Collector saturation voltage * VCE(sat) IC = 700 mA, IB = 70 mA 0.22 0.6 V Output capacitance Cob VCB =6.0 V, IE = 0, f = 10 MHz 12 pF Gain bandwidth product fT VCE =6.0 V, IE = -10 mA 170 MHz * Pulsed: PW 350 ìs, duty cycle 2% hFE Classification Marking Rank 1234 5 hFE 110 180 135 220 170 270 200 320 250 400 DV |
유사한 부품 번호 - 2SD596 |
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유사한 설명 - 2SD596 |
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