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FMMT549 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FMMT549 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -35 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO VCB=-30V -0.1 ìA Emitter cut-off current IEBO VEB=-4V -0.1 ìA Collector-emitter saturation voltage * VCE(sat) IC=-1A,IB=-100mA IC=-2A,IB=-200mA -0.25 -0.50 -0.5 -0.75 V Base-emitter saturation voltage * VBE(sat) IC=-1A,IB=-100mA -0.9 -1.25 V Base-emitter voltage * VBE(ON) IC=-1A,VCE=-2V -0.85 -1 V IC=-50mA, VCE=-2V 70 200 IC=-1A, VCE=-2V 80 130 I =-2A, V =-2V 40 80 IC=-500mA,VCE=-2V 100 160 300 Current-gain-bandwidth product fT IC=-100mA,VCE=-5V,f=100MHz 100 MHz Output capacitance Cobo VCB=-10V,f=1MHz 25 pF ton VCB=-10V, f=1MHz 50 ns toff IC=-500mA,VCC=-10V,IB1=IB2=-50mA 300 ns * Pulse test: tp 300 ìs; d 0.02. Switching times hFE DC current gain * FMMT549 Marking Marking 549 |
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