| 전자부품 데이터시트 검색엔진 |
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2SC5355 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC5355 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn Silicon NPN Triple Diffused Mesa Type 2SC5355 Features Excellent switching times: tr = 0.5 ìs (max), tf =0.3 ìs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE =20(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7V Collector current ( DC) IC 5 Collector current (Pulse) ICP 7 Base current IB 1A Collector power dissipation Ta = 25 1.5 TC =25 25 Junction temperature Tj 150 Storage temperature range Tstg -55to+150 PC A W |
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