2SB1295 datasheet(1/1 Pages) KEXIN

부품명	2SB1295

상세설명	PNP Epitaxial Planar Silicon Transistors

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제조업체	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

PNP Epitaxial Planar Silicon Transistors

2SB1295

Features

Large current capacity.

Low collector to emitter saturation voltage.

Very small-sized package permitting sets to be made

smaller and slimer.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-15

V

Collector-emitter voltage

VCEO

-15

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-0.8

A

Collector current (pulse)

ICP

-3

A

Collector dissipation

PC

200

mW

Jumction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =-12V , IE =0

-100

nA

Emitter cutoff current

IEBO

VEB =-4V , IC =0

-100

nA

DC current Gain

hFE

VCE =-2V , IC = -50mA

135

600

Gain bandwidth product

fT

VCE =-2V , IC =-50mA

300

MHz

Output capacitance

Cob

VCB = -10V , f = 1MHz

15

pF

VCE(sat) IC =-5mA , IB = -0.5mA

-10

-25

mV

VCE(sat) IC = -400mA , IB = -20mA

-100

-200

mV

Base-to-emitter saturation voltage

VBE(sat) IC = -400mA , IB =-20mA

-0.9

-1.2

V

Collector-to-base breakdown voltage

V(BR)CBO IC =-10ìA , IE =0

-15

V

Collector-to-emitter breakdown voltage

V(BR)CEO IC =-1mA , RBE =

-15

V

Emitter-to-base breakdown voltage

V(BR)EBO IE =-10ìA , IC =0

-5

V

Collector-emitter saturation voltage

hFE Classification

Marking

Rank

5

6

7

hFE

135 270

200 400

300 600

UL

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유사한 부품 번호 - 2SB1295

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